-30 single p-channel enhancement mode mosfet features -30v , -4.9a , r ds(on) =70m @v gs =-10v super high dense cell design for extremely low r ds(on) . high power and current handling capability. to-220 package for through hole. absolute maximum ratings (tc=25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds v gate-source voltage v gs 20 4.9 30 v drain gurrent-continuous @t j =125 c -pulsed i d a i dm a drain-source diode forward current i s -1.7 a maximum power dissipation p d w operating junction and storage temperature range t j ,t stg -55 to 150 c thermal characteristics thermal resistance, junction-to-ambient r / ja 62.5 /w c ? r ds(on) =120m @v gs =-4.5v ? 50 s g d 4-12 4 cep05p03/CEB05P03 ceb series to-263(dd-pak) cep series to-220 g s s d d g
electrical characteristics (t c =25 c unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v,i d =-250 a -30 v zero gate voltage drain current i dss v ds =-30v, v gs =0v -1 a gate-body leakage i gss v gs =20v,v ds =0v 100 na on characteristics a gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -1 -1.5 -3 v drain-source on-state resistance r ds(on) v gs =-10v, i d =-4.9a 42 70 m ? v gs =-4.5v, i d =-2.0a 78 120 m ? on-state drain current i d(on) v ds =-5v, v gs =-10v -20 a 5 s forward transconductance fs g v ds =-15v, i d =-4.9a dynamic characteristics b input capacitance c iss c rss c oss output capacitance reverse transfer capacitance v ds = -15v, v gs =0v f =1.0mh z 1040 p f 420 p f p f 150 switching characteristics b turn-on delay time rise time turn-off delay time t d(on) t r t d(off) t f fall time v dd = -15v, i d =-1a, v gen = -10v, r gen =6 ? 8 15 ns ns ns ns 11 20 23 40 14 25 total gate charge gate-source charge gate-drain charge q g q gs q gd v ds = -15v, i d = -4.9a, v gs = -10v 22.5 29 nc nc nc 2 6 4-13 4 cep05p03/CEB05P03
parameter symbol condition min typ max unit electrical characteristics (t c =25 c unless otherwise noted) drain-source diode characteristics diode forward voltage v sd v gs = 0v, is = -1.7a -0.79 -1.2 v a notes b.guaranteed by design, not subject to production testing. a.pulse test:pulse width 300 3 s, duty cycle 2%. figure 1. output characteristics figure 2. transfer characteristics figure 4. on-resistance variation with drain current and temperature figure 3. capacitance -v ds , drain-to source voltage (v) v gs , gate-to-source voltage (v) v ds , drain-to-source voltage (v) i d , drain current (a) i d , drain current(a) c, capacitance (pf) r ds (on) , on-resistance (ohms) i d , drain current (a) -20 -16 -12 -8 -4 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -10v -9v -5v -4v -3v v gs =-6v 0.18 0.15 0.12 0.09 0.06 0.03 0.00 0 -2.5 -5 -7.5 -10 tj=125 c v gs =-10v 25 c -55 c -20 -16 -12 -8 -4 0 0 -1 -1.5 -2.0 -2.5 -3.0 -3.5 -55 c 25 c tj=125 c [ [ 4-14 4 0 5 10 15 20 25 30 ciss coss crss 1500 1250 1000 750 500 250 0 cep05p03/CEB05P03
figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature vth, normalized gate-source threshold voltage g fs , transconductance (s) v gs , gate to source voltage (v) bv dss , normalized drain-source breakdown voltage -is, source-drain current (a) figure 7. transconductance variation with drain current -i ds , drain-source current (a) figure 9. gate charge qg, total gate charge (nc) figure 10. maximum safe operating area -v ds , drain-source voltage (v) figure 8. body diode forward voltage variation with source current -v sd , body diode forward voltage (v) tj, junction temperature ( c) tj, junction temperature ( c) -i d , drain current (a) 4-15 4 -50 -25 0 25 50 75 100 125 150 1.6 1.4 1.2 1.0 0.8 0.6 0.4 v ds =v gs i d =-250 ? a -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250 ? a 10 8 6 4 2 0 0 5 10 15 20 v ds =-15v 20.0 10.0 1.0 0.4 0.5 1.0 1.5 2.0 2.5 v gs =0v 70 10 1 1103060 v gs =-10v single pulse tc=25 c r ds (on)lim it dc 10m s 1m s 1 0 0 ? s 8 10 6 4 2 0 0 3 6 9 12 15 18 21 24 v ds =-15v i d =-4.9a cep05p03/CEB05P03
figure 11. switching test circuit figure 12. switching waveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% inverted pulse width 4-16 4 -v dd r d v v r s v g gs in gen out l transient thermal impedance 2 1 0.1 0.01 0.01 0.1 1 10 100 1000 10000 p dm t 1 t 2 square wave pulse duration (msec) figure 13. normalized thermal transient impedance curve 1. r / jc (t)=r (t) * r / jc 2. r / jc =see datasheet 3. t jm- t c =p*r / jc (t) 4. duty cycle, d=t1/t2 r(t),normalized effective d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse cep05p03/CEB05P03
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